The aspects of the specialized radiation-resistant VLSI design based on heterostructures

The 9th Scientific and Practical Conference ‘The aspects of the specialized radiation-resistant VLSI design based on heterostructures’ took place in Nizhny Novgorod in February 2009. At the conference the specialists of the center made a speech ‘The peculiarities of the development and technical renovation of the center fabricating photomasks for the integrated circuits of 0.18 micrometer design rule’.